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TPN7R506NH,L1Q

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TPN7R506NH,L1Q

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 4V @ 200µA

Operating Temperature : 150°C (TJ)

Package / Case : 8-PowerVDFN

Gate Charge (Qg) (Max) @ Vgs : 22 nC @ 10 V

Rds On (Max) @ Id, Vgs : 7.5mOhm @ 13A, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 6.5V, 10V

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Drain to Source Voltage (Vdss) : 60 V

Vgs (Max) : ±20V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 1800 pF @ 30 V

Mounting Type : Surface Mount

Series : U-MOSVIII-H

Supplier Device Package : 8-TSON Advance (3.1x3.1)

Mfr : Toshiba Semiconductor and Storage

Current - Continuous Drain (Id) @ 25°C : 26A (Tc)

Power Dissipation (Max) : 700mW (Ta), 42W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : TPN7R506

Description : MOSFET N-CH 60V 26A 8TSON

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N-Channel 60 V 26A (Tc) 700mW (Ta), 42W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)

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