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SISS32DN-T1-GE3

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SISS32DN-T1-GE3

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 3.8V @ 250µA

Operating Temperature : -55°C ~ 150°C (TJ)

Package / Case : PowerPAK® 1212-8S

Gate Charge (Qg) (Max) @ Vgs : 42 nC @ 10 V

Rds On (Max) @ Id, Vgs : 7.2mOhm @ 10A, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 7.5V, 10V

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Drain to Source Voltage (Vdss) : 80 V

Vgs (Max) : ±20V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 1930 pF @ 40 V

Mounting Type : Surface Mount

Series : TrenchFET® Gen IV

Supplier Device Package : PowerPAK® 1212-8S

Mfr : Vishay Siliconix

Current - Continuous Drain (Id) @ 25°C : 17.4A (Ta), 63A (Tc)

Power Dissipation (Max) : 5W (Ta), 65.7W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : SISS32

Description : MOSFET N-CH 80V 17.4A/63A PPAK

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N-Channel 80 V 17.4A (Ta), 63A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S

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