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IRFHS8342TRPBF

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IRFHS8342TRPBF

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 2.35V @ 25µA

Operating Temperature : -55°C ~ 150°C (TJ)

Package / Case : 6-PowerVDFN

Gate Charge (Qg) (Max) @ Vgs : 8.7 nC @ 10 V

Rds On (Max) @ Id, Vgs : 16mOhm @ 8.5A, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Drain to Source Voltage (Vdss) : 30 V

Vgs (Max) : ±20V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 600 pF @ 25 V

Mounting Type : Surface Mount

Series : HEXFET®

Supplier Device Package : PG-TSDSON-6

Mfr : Infineon Technologies

Current - Continuous Drain (Id) @ 25°C : 8.8A (Ta), 19A (Tc)

Power Dissipation (Max) : 2.1W (Ta)

Technology : MOSFET (Metal Oxide)

Base Product Number : IRFHS8342

Description : MOSFET N-CH 30V 8.8A/19A TSDSON

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N-Channel 30 V 8.8A (Ta), 19A (Tc) 2.1W (Ta) Surface Mount PG-TSDSON-6

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