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PSMN2R0-55YLHX

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PSMN2R0-55YLHX

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 2.2V @ 1mA

Operating Temperature : -55°C ~ 175°C (TJ)

Package / Case : SOT-1023, 4-LFPAK

Gate Charge (Qg) (Max) @ Vgs : 184 nC @ 10 V

Rds On (Max) @ Id, Vgs : 2.1mOhm @ 25A, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Drain to Source Voltage (Vdss) : 55 V

Vgs (Max) : ±20V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 11353 pF @ 27 V

Mounting Type : Surface Mount

Series : -

Supplier Device Package : LFPAK56, Power-SO8

Mfr : Nexperia USA Inc.

Current - Continuous Drain (Id) @ 25°C : 200A (Ta)

Power Dissipation (Max) : 333W (Ta)

Technology : MOSFET (Metal Oxide)

Base Product Number : PSMN2R0

Description : PSMN2R0-55YLH/SOT1023/4 LEADS

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N-Channel 55 V 200A (Ta) 333W (Ta) Surface Mount LFPAK56, Power-SO8

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