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2N6660

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2N6660

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Product Status : Active

Mounting Type : Through Hole

Vgs(th) (Max) @ Id : 2V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds : 50 pF @ 24 V

Series : -

Vgs (Max) : ±20V

Package : Bag

Supplier Device Package : TO-39

Rds On (Max) @ Id, Vgs : 3Ohm @ 1A, 10V

Mfr : Microchip Technology

Operating Temperature : -55°C ~ 150°C (TJ)

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V

Power Dissipation (Max) : 6.25W (Tc)

Package / Case : TO-205AD, TO-39-3 Metal Can

Drain to Source Voltage (Vdss) : 60 V

Current - Continuous Drain (Id) @ 25°C : 410mA (Ta)

Technology : MOSFET (Metal Oxide)

Description : MOSFET N-CH 60V 410MA TO39

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N-Channel 60 V 410mA (Ta) 6.25W (Tc) Through Hole TO-39

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