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FGB3056_F085

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FGB3056_F085

Gate-Emitter Leakage Current : 40 uA

Product Category : IGBT Transistors

Mounting Style : SMD/SMT

Continuous Collector Current at 25 C : 29 A

Pd - Power Dissipation : 200 W

Collector- Emitter Voltage VCEO Max : 560 V

Package / Case : TO-263AB

Maximum Operating Temperature : + 175 C

Maximum Gate Emitter Voltage : +/- 10 V

Packaging : Reel

Configuration : Single

Collector-Emitter Saturation Voltage : 1 V

Manufacturer : Fairchild Semiconductor

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The FGB3056_F085,from Fairchild Semiconductor,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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