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J111,126

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J111,126

Transistor Polarity : N-Channel

Technology : Si

Product Category : RF JFET Transistors

Mounting Style : Through Hole

Transistor Type : JFET

Pd - Power Dissipation : 400 mW

Package / Case : TO-92

Vds - Drain-Source Breakdown Voltage : 40 V

Packaging : Ammo Pack

Id - Continuous Drain Current : 20 mA

Vgs - Gate-Source Breakdown Voltage : 40 V

Manufacturer : NXP Semiconductors

Description : RF JFET Transistors N-Channel Single 40V 20mA

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The J111,126,from NXP Semiconductors,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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