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ATF-36163-TR2G

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ATF-36163-TR2G

Vgs - Gate-Source Breakdown Voltage : - 3 V

Technology : GaAs

Product Category : RF JFET Transistors

Mounting Style : SMD/SMT

Gain : 10 dB

Transistor Type : pHEMT

Pd - Power Dissipation : 180 mW

Package / Case : SOT-363

Maximum Operating Temperature : + 150 C

Vds - Drain-Source Breakdown Voltage : 3 V

Packaging : Reel

Id - Continuous Drain Current : 40 mA

Manufacturer : Avago / Broadcom

Description : RF JFET Transistors Transistor GaAs High Frequency

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The ATF-36163-TR2G,from Avago / Broadcom,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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