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TGF2120

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TGF2120

Vgs - Gate-Source Breakdown Voltage : - 12 V

Technology : GaAs

Product Category : RF JFET Transistors

Gain : 11 dB

Transistor Type : pHEMT

Pd - Power Dissipation : 4.2 W

Package / Case : Die

Maximum Operating Temperature : + 150 C

Vds - Drain-Source Breakdown Voltage : 8 V

Packaging : Tray

Id - Continuous Drain Current : 194 mA

Manufacturer : Qorvo

Description : RF JFET Transistors DC-20GHz Gain 11dB 57% PAE@12GHz

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The TGF2120,from Qorvo,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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