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2SK3557-6-TB-E

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2SK3557-6-TB-E

Transistor Polarity : N-Channel

Technology : Si

Product Category : RF JFET Transistors

Mounting Style : SMD/SMT

Transistor Type : JFET

Pd - Power Dissipation : 200 mW

Package / Case : SOT-23-3

Maximum Operating Temperature : + 150 C

Vds - Drain-Source Breakdown Voltage : 15 V

Packaging : Reel

Maximum Drain Gate Voltage : - 15 V

Id - Continuous Drain Current : 50 mA

Vgs - Gate-Source Breakdown Voltage : - 15 V

Manufacturer : onsemi

Description : RF JFET Transistors LOW-FREQUENCY AMPLIFIER

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The 2SK3557-6-TB-E,from onsemi,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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