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NESG2101M16-T3-A

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NESG2101M16-T3-A

Transistor Polarity : NPN

Technology : SiGe

Product Category : RF Bipolar Transistors

Mounting Style : SMD/SMT

Transistor Type : Bipolar

Collector- Emitter Voltage VCEO Max : 5 V

Package / Case : M16

DC Collector/Base Gain hfe Min : 130

Packaging : Reel

Configuration : Single

Manufacturer : CEL

Emitter- Base Voltage VEBO : 1.5 V

Continuous Collector Current : 100 mA

Description : RF Bipolar Transistors NPN High Frequency

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The NESG2101M16-T3-A,from CEL,is RF Bipolar Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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